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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X NPN 2 GHz RF power transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES * High power gain * High efficiency * Small size discrete power amplifier * 1.9 GHz operating area * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter
1 Top view
BFG11; BFG11/X
DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73
DESCRIPTION
handbook, 2 columns 4
3
2
MSB014
BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143.
QUICK REFERENCE DATA RF performance at Tamb = 25 C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 PL (mW) 400 Gp (dB) 4 c (%) 50
1995 Apr 07
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 60 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter - - - - - -
BFG11; BFG11/X
MIN. 8
MAX. 20 2.5 500 500 400 +150 175 V V V
UNIT
mA mA mW C C
-65 -
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 60 C; note 1; Ptot = 400 mW VALUE 290 UNIT K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin.
handbook, halfpage
500 P tot 400
MLC818
(mW)
300
200
100
0 0 50 100 150 Ts ( C)
o
200
Fig.2 Power derating curve.
1995 Apr 07
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.1 mA; IE = 0 open base; IC = 10 mA; IB = 0 open collector; IE = 0.1 mA; IC = 0 VCE = 8 V; VBE = 0 IC = 100 mA; VCE = 5 V IE = ie = 0; VCB = 3.6 V; f = 1 MHz IC = 0; VCE = 3.6 V; f = 1 MHz 8
BFG11; BFG11/X
MIN. 20 2.5 - 25 - - - - -
MAX. V V V
UNIT
100 - 4 3
A pF pF
handbook, halfpage
4
MLC848
Cc (pF) 3
2
1
0 0 2 4 6 8 10 V CB (V)
IC = 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of collector-base voltage; typical values.
1995 Apr 07
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
APPLICATION INFORMATION RF performance at Tamb = 25 C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 ICQ (mA) 1 PL (mW) 400
BFG11; BFG11/X
Gp (dB) 4 typ. 5
c (%) 50 typ. 70
Ruggedness in class-AB operation The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC849
MLC850
handbook, halfpage
8
Gp (dB)
100 c c 80 Gp (%)
handbook, halfpage
800
PL (mW) 600
6
4
60
400
2
40
200
0 0 200 400 600
20 800 P L (mW)
0 0 100 200 PD (mW) 300
Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 400 mW.
Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 400 mW.
Fig.4
Power gain and collector efficiency as functions of load power; typical values.
Fig.5
Load power as a function of drive power; typical values.
1995 Apr 07
5
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
SPICE parameters for the BFG11 crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34(1) 35(1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 3.338 97.14 0.988 31.40 51.45 23.53 2.386 13.73 0.989 2.448 100.0 54.10 1.224 1.740 1.000 1.740 59.65 0.124 0.000 1.110 3.000 9.555 0.600 0.315 12.96 400.0 0.866 5.940 0.000 4.274 0.650 0.392 0.150 0.000 0.000 - - V A pA - - - V A fA - A m - eV - pF V - ps - V A deg pF V - - ns F Cbe Ccb Cce L1 L2 L3 LB LE
C be L1 B LB B'
handbook, halfpage
BFG11; BFG11/X
UNIT fA
SEQUENCE No. 36(1) 37(1) 38 Note
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.742 - -
UNIT mV
1. These parameters have not been extracted, the default values are shown.
C cb
L2 C' E' LE
MBC964
C
Cce
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6) DESIGNATION 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
1995 Apr 07
6
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
Test circuit information
BFG11; BFG11/X
handbook, full pagewidth
V bias
R2
VS
R1
T1 C11, C12, C13
50 input
C1
,,, , , ,,,,
L11 L10 L9 L1 L2 C2
C10
C9
L3
DUT
C3, C4, C5
,, ,, ,, ,, ,, ,,,,
C14 L8 L7 L5 L4 L6 C6, C7
C15
50 output C8
MLC851
Fig.7 Common-emitter test circuit for class-AB operation at 1900 MHz.
1995 Apr 07
7
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
List of components used in test circuit (see Fig.8) COMPONENT C1, C8, C9, C10 C2 C3 C4, C7 C5, C6, C11, C12,C13 C14, C15 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 T1 R1 R2 Notes DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 micro choke BD228 metal film resistor metal film resistor 20 ; 0.4 W 265 ; 0.4 W VALUE 24 pF 0.4 pF 0.6 pF 1 pF 1.5 pF 10 nF 10 V; 470 F
BFG11; BFG11/X
DIMENSIONS
CATALOGUE N0.
2222 031 34471 length 4 mm width 0.93 mm length 26 mm width 0.93 mm length 1.9 mm width 0.93 mm length 3.1 mm width 0.93 mm length 1.8 mm width 0.93 mm length 26.4 mm width 0.93 mm length 10 mm width 0.93 mm length 4.4 mm width 0.4 mm length 19.3 mm width 0.93 mm length 19.7 mm width 0.4 mm
2322 157 10209 2322 157 12651
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 132 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6).
1995 Apr 07
8
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
handbook, full pagewidth
60
Base 70 V bias
Collector
R2
T1
R1
L11
C14 L10 C10 C11 C12
C15
VS L9 L8 C9 C4 C5 L7 C6 C8 C1 C2 L1 L2 Base C3 L3 L4 L5 C7 Collector L6
MLC852
C13
Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
1995 Apr 07
9
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
PACKAGE OUTLINE
BFG11; BFG11/X
handbook, full pagewidth
0.75 0.60
0.150 0.090 4 0.1 max 10 max
o
3.0 2.8 1.9 3
B A 0.2 M A B
10 max
o
1.4 1.2
2.5 max
1 1.1 max
o
2 0.1 M A B
30 max
0.88
0 0.1 1.7
0.48
0 0.1
MBC845
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1995 Apr 07
10
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
NOTES
BFG11; BFG11/X
1995 Apr 07
11
Philips Semiconductors - a worldwide company
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Printed in The Netherlands
123055/1500/03/pp12 Document order number: Date of release: 1995 Apr 07 9397 750 00017
Philips Semiconductors

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